Exchange bias structure for abutted junction GMR sensor

ABSTRACT

Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.

FIELD OF THE INVENTION

The invention relates to the general field of magnetic read heads withparticular reference to edge stabilization of spin valve structures.

BACKGROUND OF THE INVENTION

Due to the fast increase of recording density in the past decade, trackwidths continue to shrink into the deep sub-micron region. Currently,the magnetic track width has decreased to less than 0.2 μm for higherthan 45 Gb/in² recording densities. Different sensor stabilizationschemes have been proposed to suppress the ever increasing demagnetizingeffect on the sensor edge, including traditional hard biased abuttedjunction (ABJ) schemes and continuous pattern exchange (PEX) biasstabilization schemes as shown in FIGS. 1 and 2.

FIG. 1 shows a central GMR (giant magneto-resistance) stack made up of abottom antiferromagnetic (AFM) layer 11 which serves to pin themagnetization of pinned layer 12. Non-magnetic spacer layer 13(typically copper) sits atop layer 12 and is itself covered by freelayer 14. Capping layer 15 completes the stack.

Longitudinal bias stabilization is provided by a ferromagnetic layer 17whose magnetization is pinned by an adjacent antiferromagnetic layer.Prior art practice has been to locate the latter either directly abovelayer 17 (layer 18 in FIG. 1) or directly below it (layer 20 in FIG. 2).Also seen in both figures are the conductive leads 19.

In the standard hard bias ABJ case, in order to maintain good sensorstabilization, a thick hard bias layer is required, which causesmagnetic hardening of the free layer as track width drops, leading to adecrease of the sensor output amplitude. On the other hand, if the hardbias layer becomes too thin, its magnetic properties deteriorate, andsensor stability worsens. To counter this, pattern exchange bias schemeshave been proposed. The difficulty with these lies in the fact that itrequires an etch back process in the sensor region, which needs to becontrolled accurately. This is very difficult to achieve in a productionenvironment. Also the reduction of the MRW (magnetic read width) issomewhat limited. So far the most effective way to reduce the MRWremains the ABJ structure. But this traditional hard bias scheme reducesthe sensor sensitivity and MRW too much, and its extendability to futuregenerations is limited.

It is known that exchange bias can be utilized in abutted junction aswell. The problem with this is that a relatively large moment is neededto pin down the sensor edges effectively. Due to the inverse dependenceof the exchange bias on the magnetic layer thickness, a large exchangebias has been difficult to achieve by the prior art.

A routine search of the prior art was performed with the followingreferences of interest being found:

U.S. Pat. No. 6,324,037 B1 (Zhu et al.) shows a SV with an abuttedjunction and patterned exchange. U.S. Pat. No. 6,266,218 (Carey et al.)shows a MR with a Bottom SV and patterned exchange process. U.S. Pat.No. 6,275,362 B1 (Pinarbasi) describes a MR with a Bottom SV and bufferlayer. U.S. Pat. No. 6,310,751 B1 (Guo et al.) shows a pattern exchangefor a DSMR.

SUMMARY OF THE INVENTION

It has been an object of at least one embodiment of the presentinvention to provide a magnetic read head having a magnetic read widthless than about 0.2 microns as well as good longitudinal stability.

Another object of at least one embodiment of the present invention hasbeen that said read head be of the abutted junction type.

Still another object of at least one embodiment of the present inventionhas been to provide a process for manufacturing said read head.

These objects have been achieved in a structure that continues to bebased on the traditional abutted junction. The principal improvement hasbeen to approximately double the exchange bias of the bias layer bypinning it from both above and below through exchange withantiferromagnetic layers. Additionally, since the antiferromagneticlayer is in direct abutted contact with the free layer, it acts directlyto help stabilize the sensor edge, which is an advantage over thetraditional magnetostatic pinning that has been used.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 and 2 show two prior art configurations based on abuttedjunctions.

FIG. 3 shows the initial series of layers deposited for forming thestructure of the present invention.

FIG. 4 illustrates formation of the GMR pillar according to a firstembodiment of the invention.

FIG. 5 shows the completed device according to said first embodiment.

FIG. 6 illustrates formation of the GMR pillar according to a secondembodiment of the invention.

FIG. 7 shows the completed device according to said second embodiment.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention is based on use of a novel sandwich structurehaving different seed layers to increase the exchange bias while stillretaining the same magnetic layer thickness. For 40A CoFe, the observedexchange bias is almost doubled in our proposed structure from around4000e to 7500e.

Our structure is composed of Seed/A1//A2 structure, the layerexperiences the exchange bias from both top and bottom interface withthe A layers, leading to the large increase of the exchange bias. Thepreferred structure could include IrMn and CoFe. The reason is that IrMncan be rather thin (less than 100 Å) and, furthermore, it does notrequire extensive annealing to achieve its high exchange bias. CoFe ispreferred because it couples well with IrMn and its moment is higherthan NiFe, which means that its physical thickness can be reduced. Theseed layer in this structure can be either deposited later along withthe exchange bias structure, or it may simply be left in place after thepreceding IBE (ion beam etching) step that was used to create thejunction pedestal. For example, for the standard BSV (bottom spin valve)process, the seed layer left over could be nickel-chromium with some MP(manganese platinum).

Referring now to FIG. 3, we begin a description of a process formanufacturing the present invention. This description will also furtherclarify the structure of the present invention. The process begins withthe provision of substrate 31 onto which is deposited seed layer 16.Suitable materials for the seed layer include Ta, NiFe, NiFeCr, and NiCrand it is deposited to a thickness between about 30 and 100 Angstroms.Next comes the deposition of antiferromagnetic layer 11 (materials suchas MnPt, NiMn, IrMn, PtPdMn, AuMn, RhMn, RuRhMn, OsMn, and CrPtMn) andit is deposited to a thickness between about 30 and 300 Angstroms.

This is followed by the deposition of pinned layer structure 12 which isformed by first depositing an AP1 ferromagnetic layer to a thicknessbetween about between about 5 and 25 Angstroms. AP1 is then magnetizedin a first direction following which an antiferromagnetic coupling layer(e.g. Ru or Rh) is deposited to a thickness between about between about2 and 10 Angstroms. A second ferromagnetic layer, AP2, is then depositedto a thickness between about between about 5 and 35 Angstroms on theantiferromagnetic coupling layer and AP2 is magnetized in a seconddirection that is antiparallel to said first direction.

Non-magnetic spacer layer 13 is then deposited on pinned layer structure12, this being followed by the deposition of free layer 14, made of amaterial such as Cu, Fe, CoFe, CoFeB, NiFe, and CuFe, and deposited to athickness between about 15 and 70 Angstroms. This part of the processconcludes with the deposition of capping layer 15.

Referring next to FIG. 4, a photoresist mask (not shown) is formed at acentral location on layer 15 to define the read head pillar itself. Thenion milling is used to remove material not protected by the mask.Because of undercutting of the mask as ion milling proceeds, the pillaris formed with sloping sides, as shown in FIG. 4. No end point detectionis needed to decide precisely when the seed layer has been reached sinceit is not important to control how much, if any, of the seed layerremains at the conclusion of ion milling. In FIG. 4 we show the seedlayer (now labeled as 46) having been partly removed outside the pillar.

The longitudinal biasing structure is now formed, as illustrated in FIG.5. With the photoresist mask still in place, second seed layer 56 isdeposited over first seed layer 46 to a thickness sufficient for it toextend up the sides of the pillar approximately as far as free layer 14(between about 10 and 100 Angstroms). Second seed layer 56 is a materialsuch as Ta, NiFe, Cu, NiFeCr, and NiCr. Then, antiferromagnetic layer 50(IrMn, RuMn, RhMn, RuRhMn, OsMn, NiMn, PtMn) is deposited to a thicknessbetween about 20 and 200 Angstroms, followed by the successivedepositions of ferromagnetic layer 17 (CoFe, CoFeB, NiFe, Co, and Fe),deposited to a thickness between about 50 and 300 Angstroms), andantiferromagnetic layer 58 (IrMn, RuMn, RhMn, RuRhMn, OsMn, NiMn, andPtMn) deposited to a thickness between about 20 and 200 Angstroms). Thelast layer to be deposited is conductive lead layer 19.

Using standard liftoff procedures, the photoresist mask is now removed,along with all material that had deposited onto it, thereby exposingcapping layer 15 and giving the structure the appearance illustrated inFIG. 5. The device is completed with an annealing step which causesferromagnetic layer 17 to become permanently magnetized through exchangebias provided by the two antiferromagnetic layers 50 and 58 whichenables it to provide longitudinal stabilization for the free layer (ofbetween about 100 and 1,000 Oe) by virtue of its making abutted contactto it.

A second embodiment of the invention also begins with the formation ofthe layered structure shown in FIG. 3. However, during the formation ofthe read head pillar by ion milling, end point detection is used toensure that ion bombardment ceases as soon as seed layer 16 has beenexposed. This allows deposition of a second seed layer (56 in FIG. 5) tobe omitted, giving the structure the appearance illustrated in FIG. 6.The process is then completed as in the previous embodiment, thecompleted unit being as shown in FIG. 7. Here again, ferromagnetic layer17 has been permanently magnetized through exchange coupling with twoantiferromagnetic layers that contact its upper and lower surfaces,while being itself in abutted contact with the free layer.

SUMMARY

Compared to other schemes, the above described structure has thefollowing advantages:

1. As a key feature, the exchange bias is significantly improved toabout twice the value found in prior art structures, making thelongitudinal stabilization more effective.

2. The traditional abutted junction structure continues to be utilized.This helps to reduce the MRW more effectively and no modification of thecurrent manufacturing process is needed.

3. The ion beam milling step may be terminated without the need for anetch stop since the seed layer is to be left behind, there being no needto deposit another seed layer. The AFM layer is in direct contact withthe edge of the free layer, so it acts directly to help stabilize thesensor edge, which is an advantage in addition to the traditionalmagnetostatic pinning provided by the FM layer.

4. As track widths continue to shrink and free layer moments continuesto drop, the required pinning moment will also be reduced. This willintrinsically make the exchange bias even stronger, offering goodextendability relative to other read head structures.

1. A process to manufacture a GMR read head structure, comprising: on asubstrate, depositing a first seed layer; depositing a firstantiferromagnetic layer on said first seed layer; depositing a pinnedlayer structure on said first antiferromagnetic layer; depositing anon-magnetic spacer layer on said pinned layer; depositing a free layeron said spacer layer and then depositing a capping layer on said freelayer; then, by means of ion milling in the presence of a photoresistmask until at least part of said first seed layer has been removed,patterning said layers to form a pillar that is centrally located andthat has opposing sloping sides; with said photoresist mask still inplace, depositing a second seed layer on said first seed layer and onsaid sloping sides; depositing a second antiferromagnetic layer on saidsecond seed layer: depositing a ferromagnetic layer on said secondantiferromagnetic layer; depositing a third antiferromagnetic layer onsaid ferromagnetic layer; depositing a conductive lead layer on saidthird ferromagnetic layer; lifting off said photoresist mask wherebysaid capping layer is exposed and the read head is formed; and thenannealing said read head in the presence of a magnetic field wherebysaid ferromagnetic layer becomes permanently magnetized through exchangebias provided by both said second and third antiferromagnetic layersthereby enabling it to provide longitudinal stabilization for said freelayer of between about 100 and 1,000 Oe.
 2. The process described inclaim 1 wherein said first seed layer is selected from the groupconsisting of Ta, NiFe, NiFeCr, and NiCr.
 3. The process described inclaim 1 wherein said first seed layer is deposited to a thicknessbetween about 30 and 100 Angstroms.
 4. The process described in claim 1wherein said first antiferromagnetic layer is selected from the groupconsisting of MnPt, NiMn, IrMn, PtPdMn, RuMn, RhMn, RuRhMn, and OsMn. 5.The process described in claim 1 wherein said first antiferromagneticlayer is deposited to a thickness between about 30 and 300 Angstroms. 6.The process described in claim 1 wherein the step of depositing a pinnedlayer structure on said first antiferromagnetic layer further comprises:depositing an AP1 ferromagnetic layer to a thickness between aboutbetween about 5 and 25 Angstroms; magnetizing said first AP1ferromagnetic layer in a first direction; depositing anantiferromagnetic coupling layer, to a thickness between about betweenabout 2 and 10 Angstroms, on said AP1 ferromagnetic layer; depositing anAP2 ferromagnetic layer to a thickness between about between about 5 and35 Angstroms on said antiferromagnetic coupling layer; and thenmagnetizing said AP2 ferromagnetic layer in a second direction that isantiparallel to said first direction.
 7. The process described in claim1 wherein said free layer is selected from the group consisting of CoFe,CoFeB, NiFe, Co, and Fe.
 8. The process described in claim 1 whereinsaid free layer is deposited to a thickness between about 15 and 70Angstroms.
 9. The process described in claim 1 wherein said secondantiferromagnetic layer is selected from the group consisting of MnPt,NiMn, IrMn, PtPdMn, RuMn, RhMn, RuRhMn, and OsMn.
 10. The processdescribed in claim 1 wherein said second antiferromagnetic layer isdeposited to a thickness between about 20 and 200 Angstroms.
 11. Theprocess described in claim 1 wherein said ferromagnetic layer isselected from the group consisting of CoFe, CoFeB, NiFe, Go, and Fe. 12.The process described in claim 1 wherein said ferromagnetic layer isdeposited to a thickness between about 50 and 300 Angstroms.
 13. Theprocess described in claim 1 wherein said third antiferromagnetic layeris selected from the group consisting of MnPt, NiMn, IrMn, PtPdMn, RuMn,RhMn, RuRhMn, and OsMn.
 14. The process described in claim 1 whereinsaid third antiferromagnetic layer is deposited to a thickness betweenabout 30 and 200 Angstroms.
 15. The process described in claim 1 whereinsaid second seed layer is selected from the group consisting of Ta,NiFe, NiFeCr, NiCr.
 16. The process described in claim 1 wherein saidsecond seed layer is deposited to a thickness between about 10 and 100Angstroms.